A Product Line of
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
20V
R DS(on) Max
200m Ω @ V GS = 4.5V
260m Ω @ V GS = 2.5V
400m Ω @ V GS = 1.8V
I D max
T A = 25 ° C
(Notes 4)
1.73A
1.50A
1.27A
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Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2KV
Qualified to AEC-Q101 Standards for High Reliability
500m Ω @ V GS = 1.5V
1.15A
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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Case: X1-DFN1212-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.005 grams (approximate)
Drain
X1-DFN1212-3
Body
Diode
Gate
Gate
Protection
Diode
Source
Top View
Bottom View
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 3)
Part Number
DMN2300UFD-7
Marking
KS2
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
1 of 7
www.diodes.com
September 2011
? Diodes Incorporated
相关PDF资料
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